WSD80100DN56 N-saluran 80V 100A DFN5X6-8 WINSOK MOSFET
Gambaran keseluruhan produk WINSOK MOSFET
Voltan WSD80100DN56 MOSFET ialah 80V, arus ialah 100A, rintangan ialah 6.1mΩ, saluran adalah saluran N, dan pakejnya ialah DFN5X6-8.
Kawasan aplikasi WINSOK MOSFET
Drone MOSFET, MOSFET motor, MOSFET elektronik automotif, MOSFET peralatan utama.
WINSOK MOSFET sepadan dengan nombor bahan jenama lain
AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.
Parameter MOSFET
| Simbol | Parameter | Penilaian | Unit |
| VDS | Voltan Punca Parit | 80 | V |
| VGS | Pintu-Source Voltan | ±20 | V |
| TJ | Suhu Persimpangan Maksimum | 150 | °C |
| ID | Julat Suhu Penyimpanan | -55 hingga 150 | °C |
| ID | Arus Parit Berterusan, VGS=10V,TC=25°C | 100 | A |
| Arus Parit Berterusan, VGS=10V,TC=100°C | 80 | A | |
| IDM | Arus Parit Berdenyut ,TC=25°C | 380 | A |
| PD | Pelesapan Kuasa Maksimum,TC=25°C | 200 | W |
| RqJC | Rintangan Terma-Simpang ke Kes | 0.8 | °C |
| EAS | Tenaga Avalanche, Nadi tunggal, L=0.5mH | 800 | mJ |
| Simbol | Parameter | syarat | Min. | Taip. | Maks. | Unit |
| BVDSS | Voltan Pecah Punca Parit | VGS=0V , ID=250uA | 80 | --- | --- | V |
| △BVDSS/△TJ | BVDSSPekali Suhu | Rujukan kepada 25℃, sayaD=1mA | --- | 0.043 | --- | V/℃ |
| RDS(HIDUP) | Sumber Parit Statik Pada Rintangan2 | VGS=10V , ID=40A | --- | 6.1 | 8.5 | mΩ |
| VGS(th) | Voltan Ambang Pintu | VGS=VDS, sayaD=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Pekali Suhu | --- | -6.94 | --- | mV/℃ | |
| IDSS | Arus Kebocoran Sumber Parit | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Arus Kebocoran Sumber Pintu | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Transkonduktans Hadapan | VDS=5V , ID=20A | 80 | --- | --- | S |
| Qg | Jumlah Caj Gate (10V) | VDS=30V , VGS=10V , ID=30A | --- | 125 | --- | nC |
| Qgs | Caj Sumber Pintu | --- | 24 | --- | ||
| Qgd | Caj Parit Pintu | --- | 30 | --- | ||
| Td(on) | Masa Lengah Hidupkan | VDD=30V , VGS=10V , RG=2.5Ω, sayaD=2A ,RL=15Ω. | --- | 20 | --- | ns |
| Tr | Masa Bangkit | --- | 19 | --- | ||
| Td(mati) | Masa Lengah Matikan | --- | 70 | --- | ||
| Tf | Masa Kejatuhan | --- | 30 | --- | ||
| Ciss | Kapasitan Input | VDS=25V , VGS=0V , f=1MHz | --- | 4900 | --- | pF |
| Coss | Kapasitan Keluaran | --- | 410 | --- | ||
| Crss | Kapasitan Pemindahan Songsang | --- | 315 | --- |
